Overload robust IGBT design for SSCB application

نویسندگان

  • Ihsan Supono
  • Jesús Urresti-Ibañez
  • Alberto Castellazzi
  • David Flores
چکیده

This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possiblewithout compromising the forward voltage blocking capability. Indeed, a high overcurrent turn-off and short-circuit withstand capabilities have to be ensured. Starting from a standard NPT-IGBT design for switching applications, the results show that the proposed device, which is optimised by the application of the individual clustered concept, offers a reduction in conduction losses of 13%, without compromise on voltage blocking capability. An original design solution is implemented to further ensure short-circuit and overload turn-off capabilities at maximum ambient temperature and twice the nominal rated current. 2014 Elsevier Ltd. All rights reserved.

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عنوان ژورنال:
  • Microelectronics Reliability

دوره 54  شماره 

صفحات  -

تاریخ انتشار 2014